Sub-Millisecond Transient Analysis of High Voltage SiC MOSFET and High Voltage SiC IGBT

This work presents the pulse evaluation and characterization of a 10-kV silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) and 27-kV SiC insulated gate bipolar transistor (IGBT). These devices are ideal for high-voltage, fast-switching, and high-power density electronic applications due to their superior material properties compared with their silicon counterpart. The static and transient performance of these devices were investigated and reported. The goal of the evaluation is to assess the sub-millisecond-pulse current handling capabilities of these power devices. The sub-millisecond analysis of SiC MOSFET and SiC IGBT yielded a maximum peak pulse current of 110 A and 84 A respectively.