A 12–162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination

A low power 12–162 GHz distributed amplifier (DA) is demonstrated with an average gain of 25 dB. This circuit is realized with a NMOS/HBT cascode cell using a 45-nm BiCMOS Silicon-on-Insulator (SOI) process. The DA utilizes the high
$\mathrm{f}_{\max}$
CMOS to provide an active bias termination on the input in order to add tunability in the circuit to mitigate the unknowns of a new process. The total power consumption of the DA is 215 mW with a core area of 0.45
$\text{mm}^{2}$
.