Demonstration of a High Repetition Rate Solid-State Switched Spiral Generator

Spiral generators can be used to generate high-voltage pulses on the order of singles to hundreds of nanoseconds with a single switch. They act as the energy storage, voltage multiplication, and sometimes as an RF source all in one compact package. This compact design makes them attractive for high voltage pulse generation in volume and weight sensitive applications. Previous work has primarily leveraged spark gap devices as an initiation switch for operation. Some limited work has explored using thyristors as a replacement for the spark gaps. This paper explores the use of wide bandgap field effect transistors as an initiation switch for the spiral generators to push the pulse repetition frequency (PRF) higher previously demonstrated. Silicon-Carbide (SiC) transistors are evaluated as closing switches for the spiral generator. Electrical characteristics of the transistors are analyzed and compared to traditional spark gaps. Operation of a 10-turn spiral generator is experimentally demonstrated to step up SOO V input voltage to 10 kV at a 100 kHz PRF. Commentary on driving the spiral generator to higher voltage and PRF is presented.