Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers

In this invited paper, measured results of four different analog/mmWave circuits with excellent figures-of-merit (FoM) are demonstrated in SiGe technologies. First, a low noise amplifier (LNA) with very high gain of 19.1 dB and NF of 1.3 dB at 19 GHz for SATCOM is demonstrated. A mmWave cascode power cell having an excellent Psat of 17 dBm with 45% PAE at 47 GHz is shown. SiGe npn ring oscillator (RO) with very low delay of 2.59 ps using tail current of 3.57 mA is demonstrated. Finally, performance of transimpedance amplifiers (TIA) is compared across two different SiGe Technologies using measurements. Excellent agreement with simulations is demonstrated in the case of LNA and TIA.