A Physically-Based Matching Model for HiSIM_HV

This paper presents a physically-based matching model that incorporates mismatch fluctuations into the HiSIM_HV MOSFET model. Analytical expressions capturing variations in threshold voltage, current factor, and drift region resistor have been developed and integrated into the compact model. The proposed model accurately predicts drain current mismatch across a wide operational range while utilizing just three matching parameters. Validation was performed through Monte Carlo simulations, which were compared against experimental measurements on diverse device classes fabricated using X-FAB's 0.18 µm processes. The results encompass drain current mismatch, standard deviation of threshold voltage, and standard deviation of the current factor. The presented outcomes demon-strate good agreement between measurements and simulations.