Optimized Design and Implementation of Double-Barrier Resonant Tunneling Diodes

This paper presents the optimized design and implementation of double-barrier resonant tunneling diodes (RTDs). The effect of junction size in the epitaxial layer structure of the RTD device on its static current–voltage (I–V) characteristics was investigated using a physics-based simulation method, and the relationship with the maximum radio-frequency (RF) power PRF, max of the RTD-based terahertz source was analyzed. Next, RTDs with different junction sizes were fabricated using micromachining process. Finally, the static I–V characteristics of the RTD devices were characterized. The simulation results were validated by the experimental data, and the peak-to-valley current ratio (PVCR) of the fabricated device reached 4.99, the maximum RF power PRF,max was estimated to be 2.43 mW with an oscillation frequency (Fmax) higher than 2 THz. These results indicated that this work helps to optimize the maximum RF power of the RTD-based terahertz source and demonstrated the promising application of RTD devices in emerging terahertz applications.