Antiferroelectric Negative Capacitance Transistor for Low Power Consumption

The huge power consumption in chips puts forward high requirements to steep subthreshold swing (SS), sub-nanometer equivalent oxide thickness (EOT), low supply voltage (
$V_{\text {dd}}$
), and hysteresis-free operations on single-transistor level. However, neither high permittivity materials nor transient negative capacitance (NC) effect can simultaneously meet above requirements. Here, by utilizing stabilized NC effect, a pA-level leakage current, 0.79 nm EOT, steep SS reaching to 60 mV/dec at room temperature, and nearly hysteresis-free operation are realized in transistors with HfO2/PbZrO3 as gate oxide and InGaZnOx as channel. The stabilized NC effect in antiferroelectric PbZrO3 accelerates the switching speed and reduces the EOT in transistors. The antiferroelectric NC transistors provide a highway to low-power-consumption logic devices.