A Physics-Based Compact Model for the Static Drain Current in Heterojunction Barrier CNTFETs—Part II: Scattering, High-Field Effects, and Model Verification

In this second part, the drain-current formulation for hetero-barrier (HB) carbon nanotube field-effect transistors (CNTFETs) is extended by considering the impact of phonon scattering along the channel. Computationally efficient expressions for the scattering-related transmission factor and the energy-averaged mean free path (MFP) are derived. Drain-induced barrier lowering (DIBL) is also accounted for in the model. The new drain-current formulation is then compared to data from both augmented drift diffusion (DD)–based device simulations of a CNTFET unit cell structure and measurements of multitube high-frequency (HF) CNTFETs. A dc Gummel symmetry test (GST) has been successfully performed.