Piezoelectric Field Attenuation Microscopy

Piezoelectric field attenuation microscopy (PFAM) offers a novel method for the mapping of gigahertz acoustic fields in phononic integrated circuits (PnICs). The theoretical formula for the underlying physical effect is plotted as a function of carrier concentration, and is verified experimentally using transmission perturbation measurements through PnICs fabricated on gallium arsenide (GaAs). PFAM is used to map the focusing of acoustic energy in both the propagation plane and the focal plane of Gaussian-slowness corrected focusing interdigitated transducers on a GaAs substrate, with a measured acoustic beam waist of one micron.