A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

A combined common collector harmonic mixer and frequency multiplier is designed to operate at the fourth harmonic in a transceiver at around 0.88 THz in a 90-nm SiGe bipolar CMOS technology with an
$f_{T}$
/
$f_{\max}$
of 300/480 GHz. The transceiver occupies a chip area of 1.35
$\text{mm}^\text{2}$
with a current consumption of 144 mA when connected to a 3.3-V supply. Measurements reveal an effective isotropic radiated power of
$-$
30 dBm at 0.888 THz and a system receiver conversion gain of
$-$
4 dB as well as a single-sideband noise figure of 57 dB at 0.912 THz.