A Morphology Control Method of Submicron SiO2 Arrays in CHF3/Ar Inductively Coupled Plasma Etching

Inductively coupled plasma (ICP) etching is currently widely used for the SiO
2
etching process in the semiconductor device manufacturing industry. In this work, we studied the effect of process parameters on SiO
2
films based on the CHF
3
/Ar gas mixture via ICP etching and obtained a good approach for controlling profile morphologies of submicron SiO
2
arrays under a hard mask. According to the study, the expected structures can be successfully obtained by optimizing the recipes. The method developed in this work are scalable to large-volume sub-microstructures manufacturing.