The Structure and Optoelectronic Properties of Few-layer Phosphorus-implanted MoS2

Due to its tunable bandgap, superior stability, natural surface passivation, and other unique properties, molybdenum disulfide (MoS
2
) has developed into the focus of research for new materials for photoelectric sensors. $M_{0}S_{2}$ is an inherently n-type, and phosphorus (P) implantation is proven to induce p-type doping, but there needs to be more study on the optoelectronic properties of $\mathbf{P}$ implanted $\mathbf{M}$ implanted with P dopants and annealed. In impact of P implantation on the structure and optoelectronic properties of MoS
2
and the impact of annealing on the implantation effect, the pristine, the implanted, and the annealed samples are characterized and measured individually. Following P implantation, $M_{0}S_{2}$ evolves sulfur (S) vacancies, P impurities, and strained molecular structure, as evidenced by Raman spectra and XPS. P implantation created a p-type doping effect, increasing the response speed and decreasing the dark current through electrical and optoelectronic measurements. Subsequent investigations have found that annealing reduces S vacancies and P impurities in $M_{0}S_{2}$ and weakens the effect of P implantation on the structure and photoelectric properties of MoS
2
. In conclusion, the research results of this paper provide a controllable p-type doping method for MoS
2
as well as the impact of this doping method on the photoelectric performance of MoS
2
.