Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference

In this work, we present an innovative approach for nano-structuring semiconductor surfaces using an in-situ patterning process. Nanosecond pulsed direct laser interference patterning (DLIP) combined with epitaxial growth is introduced to create functional surface features on semiconductors in a rapid single-exposure step. By utilising two to four laser beams, submicron periodic nanostructures including 1D nano-gratings, 2D nano-islands and nano-holes are fabricated, serving as nucleation centres for the formation of quantum dots. The ability to create periodic features offers control over the spatial arrangement and properties of the resulting quantum structures. This direct and efficient nature of the technique makes it promising for practical applications in various fields, such as optoelectronics, nanophotonics and quantum technologies.