A New Simulation Method for 3-D Electron Beam Lithography

Electron beam lithography (EBL) is a micro processing technology that plays an important role in both semiconductor and nanotechnology fields. On the basis of a series of physical theories and models proposed by predecessors, this paper establishes models for electron scattering in solids and energy deposition models. The Monte Carlo method is used and corresponding development patterns are simulated through computer programming. The relationship between these patterns and factors such as incident electron beam energy, resist thickness, and incident dose are analyzed. Finally, the corresponding conclusion of improving resolution is obtained and compared through experiments, verifying the reliability of the model.