Multilevel Analog Modulation Based on Low Dimensional Optoelectronic Device Integration

The multilevel analog modulation unit is integrated by a dual-gate Indium Gallium Zinc Oxide transistor and Cadmium Selenide nanowire photodetector (1T1P). The transistor with dual-gate has reconfigurable transfer characteristic and resolved current output under different voltage application on dual gate, the nanowire photodetector has significantly favorable $5.55 \times 10^{15}$ Jones of specific detectivity and 5585.42 A/W of responsivity. The multilevel output in single integrated unit can be modulated in septenary by optical excitation that a detector is series with the top gate of transistor. The back gate of transistor also modulated quinary output under constant optical excitation.