Tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2

Lately, van der Waals (vdW) magnetic heterostructures have caught increasing research attention in spintronics. However, the development of vdW materials in practical spintronics devices has been largely hindered by the lack of room-temperature magnetic order. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to exhibit considerable perpendicular magnetic anisotropy and magnetic order above room temperature, we investigate the basic electronic structure and magnetic properties of Fe
3
GaTe2 and tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe
3
GaTe
2
/Insulator/Fe
3
GaTe2 by using first-principles calculations. It turns out that Fe
3
GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have substantial tunneling magnetoresistance (TMR) effect at room temperature even comparable to existing conventional MgO-based MTJs. Our findings reveal that Fe
3
GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.