An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO2-/Si3N4-Based GAA-MOSFET for SRAM Application

This research proposes an innovative analytical approach for studying the electrostatic potential distribution in multichannel gate-all-around metal–oxide–semiconductor field-effect transistors (GAA MOSFETs). The model focuses specifically on the effect of multiple nanowires on the electrostatic potential distribution and the subsequent impact on device performance in lower technology nodes. To validate the analytical model for small gate lengths, simulations are performed using the quantum potential model. The results obtained from the analytical model were further validated using the TCAD simulation. In addition, the noise margin parameters are extracted to evaluate the feasibility of advanced static random access memory (SRAM) cells. The noise margin in hold (336, 349, 342), read (100, 93, 93), and write (243, 245, 249) for different channel separation (4, 8, 10 nm) are extensively investigated. These findings provide a valuable contribution to the understanding of the electrostatic potential distribution in multichannel GAA MOSFETs and application toward the development of more advanced SRAM cells.