Photosensitivity Performance of a Gate-Oxide-Stack Intended Source FDSOI-Based 1T Pixel Sensor

In this article, we investigate a novel intended source one transistor pixel sensor (IS 1T PIXEL SENSOR) at 22-nm gate technology. The proposed pixel sensor is demonstrated with the stacked doping profile in the source region and in the gate oxide. Furthermore, the proposed pixel sensor is contrasted and compared with the conventional pixel sensor in terms of light-induced voltage source (LIVS), change in
${I}_{ \mathrm{\scriptscriptstyle ON}}$
current (
$\vert \Delta {I}_{ \mathrm{\scriptscriptstyle ON}} \vert $
), percentage photosensitivity at identical device dimension with varying light intensity ranges from 100 m W/cm2 to 1 W/cm2. Moreover, the optical performance in terms of LIVS, change in ion current (
$\vert \Delta {I}_{ \mathrm{\scriptscriptstyle ON}} \vert $
), percentage photosensitivity (%S), and responsivity of the proposed and conventional pixel sensor is studied and optimized with variation in parameter, such as variation in back-bias voltage, BOX thickness (
${\text {T}}_{\text {BOX}}$
), and substrate doping (well doping) concentration. Apart from comparative optical performance, the other significant figure of merits, such as
${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$
ratio and signal-to-noise ratio, is analyzed in the proposed device. On addition, the study further carried out for the transient analysis in light as well as dark condition, and the proposed image sensor shows 80% higher sensitivity as compared with the conventional image sensor. The proposed device also shows superior signal to noise and higher
${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$
ratio with variation in light intensity. All the investigation has been done by means of TCAD simulation and opto-electrical characterization to evaluate the pixel sensor’s characteristic.