Topological Insulators Based on Layers and Foils for Thermoelectric Microcooling Devices

We preset the results of the study on thermoelectric properties and oscillatory effects layers and foils) based on p-type Bi
2
Te
3
topological insulators and n-type Bi
0.84
Sb 0.16 foils $(d=10-20\mu\mathrm{m})$. Analysis of the Shubnikov-de Haas oscillations of p-type Bi2 Te
3
single-crystal layers has confirmed the presence of surface states in layers with a high quantum charge carrier mobility of up to $20\times 10^{3} \mathrm{cm}^{2}/(\mathrm{Vs})$ and a Fermi surface anisotropy of $A=4$, which are characteristic of bulk topological insulator. It has been revealed that the thermal conductivity of the foils in a temperature range of 300-100 K remains constant. Based on a technology developed by the authors for forming unsupported p-type Bi
2
Te
3
single-crystal micro-layers and an n-type Bi
0.84
Sb
0.16
foils a device was constructed that provides a temperature gradient of $\Delta T=9\mathrm{~K}$ over an area of $0.01\mathrm{~cm}^{2}$. Structures based on Bi
2
Te
3
can be used to design miniature sensors for thermoelectric devices, such as thermoelectric coolers, in particular, for cooling a computer processor.