PV Performance Analysis of CsSnI3 Based All-Inorganic Perovskite Solar Cell Using SCAPS Simulations

Recently A combination of its outstanding stability and simple production procedure, all-inorganic perovskite solar cells based on CsSnI3 are generating a lot of interest in optoelectronic applications. This study focuses on analysing how changes in CsSnI3 material thickness affect a device's performance. Plotting the results on J-V, PV, and EQE, the study used SCAPS software to assess the device's performance by varying the thickness of the material from 50 to 500 nm. The findings demonstrated that differences in material characteristics can have a considerable impact on device performance and that optimising material thickness is required to attain the most efficient device performance. Based on the research, increasing the thickness of CsSnI3 increased current density instead of minor changing voltage. The greatest external quantum efficiency was found at a thickness of 500 nm, while the EQE phenomenon was also seen in the thickness range of 300 to 360 nm. According to the study,
$\mathbf{J}_{\mathbf{SC}},\ \mathbf{V}_{\mathbf{OC}}$
, FF, and PCE all increased as the material's thickness increased from 50 to 500 nm. With respect to the findings, increasing material thickness had a favourable influence on the solar cell's performance, which raised PCE. Overall, the study emphasises how critical it is to comprehend how material qualities affect performance and to optimise thickness in solar cells.