Research on Key Technologies of High-power IGBT Driver Integrating Real-time Monitoring and Active Control of IGBT Status

Insulated gate bipolar transistor (IGBT), as a fully controlled power electronic device, is widely used in High Voltage Direct Current (HVDC) flexible equipment, and its fault modes include IGBT collector emitter over-voltage, IGBT gate emitter over-voltage, IGBT chip over-current, overheating or beyond safe operating area(SOA). Because the existing IGBT drivers only report overcurrent and undervoltage protection faults after an overcurrent or undervoltage fault occurs, and lack of real-time process monitoring of IGBT collector emitter voltage(Vce), gate emitter voltage(Vge), and other state variables, so the real fault cause and aging trend of IGBT cannot be accurately known. Based on this, This paper firstly presented the overall design scheme of the high-power IGBT driver integrating real-time monitoring and active control functions; The next chapter indicated the integrated measurement method for the IGBT collector emitter and gate emitter off-state and on-state voltage to meet the high dynamic and high precision performance of the switching transient V
ce
and V
ge
; In the final chapter, based on practical application requirements, the experimental verification is carried out under various conditions to achieve relatively complete real-time monitoring and active control of the IGBT module, and the IGBT fault analysis and prediction model will be further established based on the measurement results.