Experimental Comparison of Threshold Voltage Extraction Methods in SOI Nanowire Transistors

The threshold voltage is a key parameter for MOSFET modeling and can be extracted by several methods reported in the literature. However, for a given device, different methods result in different extracted values, which may cause doubt about its exact value. This paper compares the threshold voltage in SOI nanowire transistors extracted through eight different methods based on drain current measurements. Devices with different widths and lengths measured at different temperatures are analyzed. Results show that different methods can result in different values with distinct variation rates with dimensions and temperature change.