Monitoring the Temperature of a Nanowire SOI MOSFET Using a Neighbor PIN Diode

This paper discusses an alternative method to monitor a nanowire SOI MOSFET temperature rise caused by the self-heating effect using a neighbor gated PIN diode. The analysis is performed by electrothermal 3D TCAD simulations in the ambient temperature range from 300K to 600K. The influence of the distance between the nanowire MOSFET and the PIN diode is also analyzed.