Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements

This paper aims to present for the first time an analysis of the switching properties of Resistive Random-Access-Memory devices in relation to the capacitance variation of the Metal-Insulator-Metal structure. A capacitance spread was observed when a set of pulses with varying widths and amplitudes was applied to operate the devices in the Multi-Level-Cell regime. The devices demonstrate an increase in the capacitance from 2.0338 to 2.0344 pF/μm
²
from the pristine state to the maximum pulse width increment. This allows the devices to exhibit multiple capacitive reactance states, demonstrating the quantization of the conductance, required for the application in in-memory computing systems.