Low-field Mobility Degradation Factors Temperature Dependence in Two-level Stacked Nanowire MOSFETs from 120K to 400K

This study investigates carrier mobility and its degradation factors as a function of temperature for 2-level stacked nanowire MOSFETs in the temperature range of 120 K to 400 K. The Y-function method was employed to obtain low-field carrier mobility and mobility degradation factors with temperature. Results show that decreasing temperature increases the peak value of transconductance for all device geometries. The decrease in temperature also affects the gate voltage value at which the peak of transconductance and the peak of low-field carrier mobility is reached. As the temperature decreases, the gate voltage required to reach these peak values increases. The first order degradation factor was found to decrease with the increase in temperature, and the second order factor increased with temperature.