Model for magnetically enhanced capacitively coupled plasma discharges

Summary form only given. Magnetically enhanced capacitively coupled plasma (MECCP) discharges are widely used in the microelectronics industry for etching dielectric materials. MECCP etch reactors allow careful control of plasma chemistry, which is essential for developing selective etch processes.. In addition, plasma density is moderately high in MECCP reactors, thus ensuring that etch rates are reasonably large. It is anticipated that MECCP etch reactors will become even more pervasive in the microelectronics industry in the coming years. A new 2-dimensional plasma reactor model, which is capable of simulating MECCP discharges, has been developed. The model can address most commercial MECCP etch reactors for the operating range of interest as well as the relevant fluorocarbon plasma chemistries. The computational model and its applications are the subject of this paper.