An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection

A Reverse-Conducting LIGBT integrated with dual Self-Driving MOSFET (SDM), named SDM-LIGBT is proposed and investigated by the SENTAURUS. The SDM1 and SDM2 are located at the Emitter and Collector side, respectively. The Gate and the Drain of the SDM1 are shortly connected together to the Emitter of the LIGBT, and the Gate and the Drain of the SDM2 are shortly connected with the N-buffer. Consequently, the dual SDM is driven by the ${V}_{\text {EC}}$ without an extra gate signal. At the forward conduction, the dual SDM is turned off, and the SDM-LIGBT works like conventional LIGBT without a snapback effect. Moreover, the ${V}_{\text {on}}$ and the saturation current are degenerated by the decreased Main Gate width. At the reverse conduction, the dual SDM is automatically turned on successively with the increased ${V}_{\text {EC}}$ . For the SDM2, it provides an electron channel and realizes the reverse conduction. For the SDM1, it modulates the electron injection by adjusting the width ${W}_{\text {b}}$ . Thus, the better reverse recovery property is achieved. The results show that the saturation current of SDM-LIGBT with ${W}_{\text {a}}$ : ${W}_{\text {b}}$ of 3:2 is reduced by 68% and the short-circuit tolerance time ${T}_{\text {SC}}$ is extended by $5.1~\mu \text{s}$ compared with the conventional LIGBT. Furthermore, the maximum reverse recovery current ${I}_{\text {rr,max}}$ and time ${T}_{\text {rr}}$ are reduced by 30% and 17% than that of conventional p-i-n diode, respectively.