0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation

We present an integrated amplitude modulator operating in the 0.750–1.1-THz frequency range. This component offers typically a modulation depth of 10 dB, a modulation bandwidth of 40 MHz and insertion losses of 6 dB. The modulator is based on the optical pumping of an InAs layer deposited on a semiconductor substrate, using moderate pumping optical power of less than 600 mW at a wavelength of $1 \mu \mathrm{m}$. Such performances are possible thanks to its integration within a WR1.0 waveguide.