Amplified Mode Switching Effect in THz Field Effect Transistors with Grating Gate

Short-channel, high-mobility grating gate THz structures maintaining resonant oscillations of the electron density (i.e., plasma waves) in the device channels have the potential to generate high power THz radiation. In this paper, we report on a new effect of Amplified Mode Switching that involves intersecting plasmonic modes and explain recent intriguing experimental data of switching from attenuation to amplification in gated gate graphene structures.