Terahertz Hot-Electron Bolometric Detectors Based on Metal/Black-AsP/Graphene FETs: Proposal and Evaluation

A novel terahertz (THz) hot-electron bolometric detector based on a graphene field effect transistor with the black-AsP gate barrier layer (BL) is proposed and evaluated theoretically. By providing a relatively low energy barrier for the emitted electrons the b-AsP BL helps reinforce the THz radiation absorption and the intensification of the electron heating and thermionic emission associated with the resonant excitation of plasmonic oscillations in the graphene channel.