Surface Oxidisation Layer Identification of Indium Nitride Nanoparticles via s-SNOM

InN materials have been widely used in optoelectronic devices, namely red LEDs. However, the surface oxidization introduced during growth and by air exposure can change their bandgap and mobility drastically, affecting device performance. In this study, we employed a surface-sensitive technique, scattering-type scanning near-field optical microscopy (s-SNOM) to investigate the oxidization level of InN nanoparticles and demonstrate how tapping amplitude and demodulation order affect the near-field response.