Temperature-dependent THz transients emitted by optically excited FeNi/Pt spintronic emitters

We conducted a study on the temperature dependence of THz transients emitted from FeNi/Pt spintronic emitters excited by femtosecond optical pulses. The results indicate that the emitted THz radiation strength is governed by the temperature-dependent magnetization changes within the FeNi layer system. We observed a very good agreement between the magnetization and THz amplitude temperature dependences below the 0.8 T/Tc ratio. Our findings highlight the importance of considering temperature effects in THz spintronic emitters for improving their signal strength and efficiency.