THz Emission from Exchange-Coupled Fe/Ru/Ni Spintronic Emitters

We explored THz emission from $\mathrm{Si}^{2} / \mathrm{SiO}_{2} / / \mathrm{Ta} / \mathrm{Fe} / \mathrm{Ru} /$ $\mathrm{Ni} / \mathrm{Al}_{2} \mathrm{O}_{3}$ spintronic emitters. We tuned magnetization alignment of Fe and Ni layers by varying the interlayer exchange coupling (IEC) strength using a range of Ru layer thickness t. Depending on IEC strength, magnetization hysteresis shows either ferromagnetic $(t=1.1 \mathrm{~nm}, 1.5 \mathrm{~nm})$, antiferromagnetic $(t=1.3 \mathrm{~nm})$ or canted $(t=1.7 \mathrm{~nm}, 1.9 \mathrm{~nm})$ relative alignment. Competition between IEC and an external magnetic field results in a dramatic difference in THz emission from the ferromagnetically (FM) and anti-ferromagnetically (AFM) coupled structures. The resulting THz emission from IEC structures is a result of an interference of THz transiens generated by the individual $\mathrm{Fe} / \mathrm{Ru}$ and $\mathrm{Ru} / \mathrm{Ni}$ emitters.