A 1.5 /spl mu/m GaInNAs(Sb) laser grown on GaAs by MBE

We have varied growth parameters including group III and V growth rates, Sb flux, and N concentration, in the MBE growth of GaInAs(Sb)/GaAs quantum well lasers. We have found that it is possible to maintain high photoluminescence intensity for samples above 1.5 /spl mu/m. By introducing the optimum Sb flux and cracking temperature, In incorporation up to 50% becomes possible. To our knowledge, this is the highest In incorporation on GaAs reported without relaxation of the crystal.