Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT

Effect of introducing a symmetric source/drain underlap layer in heterojunction Dual Gate (DG) Metal Oxide High Electron Mobility Transistors (DG MOS-HEMTs) with AlGaN/GaN interface on analog Figure of Merits (FOM) is considered in the present investigation. The analog specifications considered are transconductance generation factor (TGF), transconductance (g
m
) and drain current (I
D
) w.r.t gate voltage (V
GS
). A 94.8% increase in ON current is observed for the device without underlap layer when compared with a device with symmetric source/drain underlap. A better transconductance peak is observed for the device without underlap with peak of 44.8% higher when juxtaposed with the symmetric underlap device, but the symmetric underlap device shows a 8.6 times higher TGF and a lower effect to Short Channel Effects like Drain Induced Barrier Lowering (DIBL) and Sub-Threshold Swing (SS).