Strained-Si- and SiGe-on-insulator (strained-SOI and SGOI) MOSFETs for high performance/low power CMOS application

We have proposed and demonstrated high performance strained-SOI and SGOI MOSFETs. It is strongly expected that strained-SOI and SGOI structures and devices based on these virtual substrates can provide new device options to sub-100 nm CMOS technology with high performance/low power consumption.