Parametrization of Simplified Memoryless Amplifier Models at 300 GHz

Behavioral amplifier models are heavily used in system-level simulations to understand the fundamental impact of a certain kind of nonlinearity for the designed transmit and receive signals. However, every model requires an accurate set of parameters to gain realistic results, which are not often publicly available, especially for higher frequency bands at millimeter-wave and above that. This applies also to transistor models used in amplifier simulations, which are, in most cases, characterized by measurements only up to around 100 GHz. In this paper, we fit parameters of common memoryless amplifier models, such as Rapp, Ghorbani, and Saleh, against measurement and circuit-level simulation data of a 300 GHz amplifier. The derived model parameters are given such that they can be used by other researchers when studying the impacts of nonlinearity. As an example, the models are utilized to simulate error vector magnitude performance with different input and output signal powers.