Comparative Study of InAs Based Tunnel FET(TFET) Biosensor

In this report, we propose a Silicon and Indium Arsenide sensor based on tunnel field effect transistors (TFETs) for label-free, low power biomolecule detection applications. ATFET-based biosensor has not yet undergone experimental validation, although a FET-based biosensor that incorporates a nanogap has. The idea of a TFET-based sensor is therefore presented through an analytical and simulation-based investigation. According to the results, a TFET-based biosensor is more sensitive to two different effects (biomolecule charge and dielectric constant) than a FET-based biosensor. Additionally, TFET is compatible with CMOS, has low leakage (low static power dissipation), and has a steep subthreshold slope, making it a desirable alternative architecture for CMOS-based sensor applications. Since biosensors may quickly respond to low concentrations, their sensitivity is inversely correlated with device size. Even though Although there are several advantages to FET-based biosensors its constrained subthreshold swing (SS > 60 mv/dec) and short channel effects (SCEs) limit the device's sensitivity and boost power dissipation. The focus of research is currently on TFET-based biosensors, which have low power and excellent properties due to the carrier tunneling from band to band and the abrupt subthresholds wing, to avoid these issues. biosensors, covering everything from biosensor application. It also includes an analysis of both qualitative and quantitative parameters, such asby contrasting distinct architectures and the underlying processes, sensitivity parameters and numerous factors impacting sensitivity. In the study, there is also a brief overview of several sensitivity parameters.