Characteristics of IGBT Devices Considering Various Parasitic Parameters and Construction of Refined Model

Under the background of the carbon peaking and carbon neutrality goals , we will vigorously develop the new energy power generation industry. The wind and solar power stations need to interact with the power grid through converters, and the HVDC and VSC-HVDC technologies are becoming more mature, and it is bound to introduce a large number of converter equipment dominated by power electronic devices. The power grid is developing towards a new power system with high proportion of new energy and high proportion of power electronics. In order to further improve the performance of the converter, semiconductor switch tubes, as an important part of the converter, have become the focus of attention. In practical projects, the more widely used switching device is still IGBT (Insulated Gate Bipolar Transistor). At present, modeling and simulation are common methods for studying and analyzing IGBT switching devices. Using accurate models can accurately predict the characteristics of the switching devices, providing strong guidance for topology design of inverter and parameter tuning of control system. Therefore, based on Saber simulation platform, the mathematical model of static characteristics of IGBT is derived through the first equivalent circuit of IGBT. For the nonlinear parasitic capacitance existing in IGBT, the mathematical description is carried out respectively through hyperbolic tangent function, piecewise nonlinear fitting and other methods to build a more accurate simulation mathematical model and improve the reliability of IGBT analysis model.