A High PSRR Curvature Compensated Bandgap Voltage Reference for LDO

A high power supply rejection ratio (PSRR) curvature compensated bandgap voltage reference (BGR) is proposed in TSMC 0.18μm BCD process. By adopting curvature compensated technique that MOS transistor operates in subthreshold region, the temperature performance of the proposed high PSRR curvature compensated BGR is efficiently improved. The PSRR of the proposed high PSRR curvature compensated BGR is efficiently improved by adopting self-biased pre-regulator. Simulation results show that the proposed high PSRR curvature compensated BGR achieves the temperature coefficient of 2.56 ppm/°C. Output voltage variation of the proposed high PSRR curvature compensated BGR is only 69.2 μV when power supply voltage changes from 3 V to 6.5 V. The proposed high PSRR curvature compensated BGR achieves PSRRs of -131 dB, -128 dB, -92 dB, -77 dB and -57 dB at 10 Hz, 1 kHz, 100 kHz, 1 MHz and 100 MHz respectively.