RF Performances and De-Embedding Techniques of Passive Devices in 3D Homogeneous Integration at Sub-THz

In this paper, passive devices integrated in the top-tier level of a 3D homogeneous integration are characterized up to 220 GHz. A three steps de-embedding process is performed to remove 1.5 mm access line and 25$\mu$m vertical Cu-pillars parasitic contribution. This process will enable to separate the technology from the millimeter-wave measurement. To validate the technique two different devices: a transmission line and an inductor are studied and compared to stand-alone planar reference device at sub-THz.