Multilevel resistive switching in thin oxide films for neuromorphic systems of artificial intillegence: simulation & experimental investigation

The work shows the results of multilevel resistive switching study in thin oxide films (TiO
2
, HfO
2
, and ZnO), formed by pulse laser deposition. A computer model that allows the simulation of multilevel resistive switching in thin oxide films is developed. The experimental and theoretical dependences of sweep voltage and compliance current effects on multilevel resistive switching in TiO2, HfO2, and ZnO films were plotted. Analysis of the obtained results showed that the maximum number of resistive states, equal to 7, is observed at a sweep voltage of 4 V and a compliance current of 10
^-3
A. The obtained results can be used in the fabrication of energy-efficient ReRAM elements for neuromorphic systems of artificial intelligence.