RF Performance of Large Germanium Telluride Switches for Power Application

This paper reports the integration and characterization of germanium telluride (GeTe) phase-change material (PCM)-based RF switches in series configuration with a 89 μm wide PCM element to address sub-6G power handling requirements. Switching conditions using indirect heating, as well as small-and large-signal measurements are performed in this work. Devices handle power up to 37 dBm and 29 dBm respectively in ON-and OFF-state at 915 MHz. These results estimate for the first time the performances of such wide GeTe switches compatible with cellular applications and investigate technological improvement guidelines.