22FDXⓇ EDMOS for 5G mmW Power Amplifier Applications

In this paper, we present the latest 22FDX
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5G power amplifier (PA) performance enhancement based on a new PA device, EDMOS. A 2-stage PA measured at 22. 9dBm Pout and 33% peak PAE with EDMOS as core device at PA stage. EDMOS achieves 20% higher voltage handling than the popular reference SLVT devices used in 22FDX
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5G PA design [1], while not sacrificing the device on-resistance ($\mathrm{R}_{\mathrm{O}\mathrm{N}}$). The cut-off frequency ($\mathrm{f}_{\mathrm{T}}$) and maximum oscillation frequency ($\mathrm{f}_{\mathrm{M}\mathrm{A}\mathrm{X}}$) are 281 GHz and 389 GHz, respectively, which is suitable for 5G PA applications. For Common-Source ($\mathrm{C}_{\mathrm{S}}$) device, EVM measurement is also showing $\sim$25% improvement over the reference SLVT device. The Pout and PAE of 2-stage PA are achieving a new record in the 22FDX
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CMOS based PA design, which makes this device as a strong candidate for 5GmmW (millimeter wave) PA in handset as well customer premises equipment (CPE).