Novel Fmax Enhancement Method for GaN HEMTs by Utilizing the Distributed Behavior of a Gate Finger

A novel fmax enhancement method for GaN HEMTs is developed by utilizing the distributed circuit behavior of a gate finger. By intentionally modifying a finger-tip termination condition, a drastic fmax improvement of more than 60% has been achieved in a millimeter-wave frequency band without changing the manufacturing process of GaN HEMTs.