On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier

This paper presents a 28 - 32 GHz 2-stage low noise amplifier (LNA). The LNA was designed and fabricated using Ferdinand-Braun-Institut’s (FBH) $0.15 \mu \mathrm{m}$ GaN on SiC process. Three samples of LNAs were characterized showing a small-signal gain of 15.3 - 16.3 dB and noise figure of 2.8 - 3.2 dB within the bandwidth. The input and output reflection coefficients are found to be better than -7.4 dB and -9.5 dB, respectively. The LNA samples were stressed with an input power up to 34.4 dBm at 30 GHz CW. Post-stress measurements reveal only a threshold shift in the first stage transistor without any significant change in the small-signal and noise performance.