A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology

This paper presents a novel type of ferroelectric field effect transistor (FeFET)- based RF switch with multiple finger structure fabricated in $22 \mathrm{~nm}$ FDSOI technology. The ability to adjust the threshold voltage non-volatile allows for a novel switch concept. The FeFET can operate at $\mathrm{V}_{\mathrm{GS}}=\mathbf{0}$, which reduces the necessity of bias-tee configurations in the signal path. It combines the advantages of passive and active RF switches with low loss and low distortion. The devices were implemented in the common-source configuration and demonstrate a large memory window exceeding $2 \mathrm{~V}$, as well as exceptional performance at mmWave frequencies. We determined a transit frequency $\left(f_{T}\right)$ and maximum oscillation frequency ($f_{\mathrm{MAX}}$) of 135GHz and 139GHz, respectively for a device with 16 fingers, $20 \mathrm{~nm}$ gate length, and $1 \mu \mathrm{m}$ gate width.