Temperature-Dependent Cascades in Irradiated InxGa1-xN (x < 0.34) Materials

Irradiated In0.32Ga0.68N in previous research showed temperature-dependent changes in Raman spectra, which indicates the crucial role of temperature in the evolution of cascades. To reveal the atomic-scale reason for temperature-dependent changes in Raman spectra, this article investigates the overlapping cascades in irradiated In0.25Ga0.75N and In0.32Ga0.68N at different temperatures with the molecular dynamics (MD) method. The presented results indicate that defects in irradiated samples at elevated temperatures experienced enhanced atomic recombination in overlapping cascades. The temperature-dependent defects in In0.32Ga0.68N relate to the temperature-dependent shift of peaks
$\text{A}_{1}^{\text {LO}}$
and
$\text{E}_{1}^{\text {LO}}$
in Raman spectra by the LO phonon–plasmon coupling. The distribution of Ga clusters, N clusters, and In clusters is expected to have additional effects on localized electron carrier concentration which further influences the wavenumbers of peaks
$\text{A}_{1}^{\text {LO}}$
and
$\text{E}_{1}^{\text {LO}}$
in Raman spectra. The presented results provide academic support for reducing the defect production rate of the ion implantation doping technique at elevated temperatures.