Evaluation of an Analytical Equivalent Hertzian Dipole Representation in TEM Cells Applying the Finite Element Method

For the metrological quantification of radiated emissions of integrated circuits (ICs), the two-port transversal-electromagnetic (TEM) cell and IC stripline methods are utilized. Analytical formulas have been developed in the past to use the TEM cell measurement for the extraction of an equivalent analytical representation of the measured device under test (DUT). The equivalent sources are described as an array of electric and magnetic dipoles and can be used for, e.g., open-area emission test simulations. This article summarizes the theoretical background of this extraction methodology and gives an instruction for the needed measurements and calculations. Furthermore, the accuracy of this equivalent source model is evaluated against full-wave finite element simulations, and its portability to IC stripline measurements is investigated.