A 100 W high efficiency broadband Power Amplifier

In this paper, we investigate the design and practical implementation of a 100W broadband power amplifier (PA) with a bandwidth from 1GHz to 2.5GHz. An externally matched GaN high electron mobility transistor (HEMT) produced by CREE Company is selected. Power combining is used to combine the outputs of two individual power amplifiers. Optimum fundamental and harmonic load impedances are obtained using load-pull simulations for the active device across the design band. Through reasonable design of wideband output and input matching networks, From continuous wave large-signal measurements a maximum output power of greater than 100 W was obtained over an octave bandwidth.